Характеристики
SIRA06DP-T1-GE3, МОП-транзистор, N Канал, 40 А, 30 В The SIRA06DP-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, high power density DC-to-DC, VRMs and embedded DC-to-DC applications.
• 100% Rg tested
• 100% UIS tested
• Halogen-free
• -55 to 150 C Operating temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы