NGD8205ANT4G, БТИЗ транзистор, 20 А, 1.3 В, 125 Вт, 350 В

Характеристики

NGD8205ANT4G, БТИЗ транзистор, 20 А, 1.3 В, 125 Вт, 350 В The NGD8205ANT4G is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications.

• Ideal for coil on plug and driver on coil applications
• Gate-emitter ESD protection
• Temperature compensated gate-collector voltage clamp limits stress applied to load
• Integrated ESD diode protection
• Low threshold voltage interfaces power loads to logic or microprocessor devices
• Low saturation voltage
• High pulsed current capability

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные